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High performance infrared detectors compatible with CMOS-circuit process |
| Chao Wang(王超)1,2, Ning Li(李宁)1, Ning Dai(戴宁)1,3,4,†, Wang-Zhou Shi(石旺舟)5, Gu-Jin Hu(胡古今)5,‡, and He Zhu(朱贺)6 |
1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;
4 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou 213164, China;
5 Department of Physics, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234, China;
6 Hangzhou Dianzi University, Hangzhou 310018, China |
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Abstract A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current (DC) bias voltage of -2.3 V, the device detectivity to blackbody irradiation is as high as 5×1013cm·Hz1/2/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.
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Received: 10 August 2020
Revised: 18 December 2020
Accepted manuscript online: 28 December 2020
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PACS:
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07.57.Kp
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(Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)
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33.20.Ea
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(Infrared spectra)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11933006, 61805060, and 61290304). |
Corresponding Authors:
Ning Dai, Gu-Jin Hu
E-mail: ndai@mail.sitp.ac.cn;hugj@shnu.edu.cn
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Cite this article:
Chao Wang(王超), Ning Li(李宁), Ning Dai(戴宁), Wang-Zhou Shi(石旺舟), Gu-Jin Hu(胡古今), and He Zhu(朱贺) High performance infrared detectors compatible with CMOS-circuit process 2021 Chin. Phys. B 30 050702
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