ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
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Effect of recombination process in femtosecond laser-induced modification on Ge crystal |
Jia-Qi Ju(居家奇)1, Zi-Yao Qin(秦子尧)1, Ju-Kun Liu(刘聚坤)1, †, Hong-Wei Zhao(赵宏伟)1, Yao-Qing Huang(黄耀清)1, Rong-Rong Hu(胡蓉蓉)1, and Hua Wu(吴华)2$ |
1 College of Science, Shanghai Institute of Technology, Shanghai 201418, China 2 College of Science, Xi’an Shiyou University, Xi’an 710065, China |
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Abstract The dynamics of produced excited carriers under the irradiation of Ge crystal is investigated theoretically by using femtosecond laser pulse. A two-temperature model combined with the Drude model is also used to study the nonequilibrium carrier density, carrier and lattice temperatures, and optical properties of the crystal. The properties of the surface plasmon wave when excited are also studied. The influences of non-radiation and radiative recombination process on the photoexcitation of the semiconductor during pulse and the relaxation after the pulse are described in detail. The results show that the effects of Auger recombination on the nonequilibrium carrier density and optical properties of the crystal and the properties of the surface plasmon polariton are great, whereas the effect of radiative recombination is extremely small.
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Received: 11 June 2020
Revised: 31 July 2020
Accepted manuscript online: 28 September 2020
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Fund: the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11804227). |
Corresponding Authors:
†Corresponding author. E-mail: liujukun@126.com
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Cite this article:
Jia-Qi Ju(居家奇), Zi-Yao Qin(秦子尧), Ju-Kun Liu(刘聚坤), Hong-Wei Zhao(赵宏伟), Yao-Qing Huang(黄耀清), Rong-Rong Hu(胡蓉蓉), and Hua Wu(吴华)$ Effect of recombination process in femtosecond laser-induced modification on Ge crystal 2020 Chin. Phys. B 29 114208
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