Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals

doi:10.1088/1674-1056/ab928b

Abstract As one of important members of refractory materials, tungsten phosphide (WP) holds great potential for fundamental study and industrial applications in many fields of science and technology, due to its excellent properties such as superconductivity and as-predicted topological band structure. However, synthesis of high-quality WP crystals is still a challenge by using tradition synthetic methods, because the synthesis temperature for growing its large crystals is very stringently required to be as high as 3000℃, which is far beyond the temperature capability of most laboratory-based devices for crystal growth. In addition, high temperature often induces the decomposition of metal phosphides, leading to off-stoichiometric samples based on which the materials' intrinsic properties cannot be explored. In this work, we report a high-pressure synthesis of single-crystal WP through a direct crystallization from cooling the congruent W-P melts at 5 GPa and ~3200℃. In combination of x-ray diffraction, electron microscope, and thermal analysis, the crystal structure, morphology, and stability of recovered sample are well investigated. The final product is phase-pure and nearly stoichiometric WP in a single-crystal form with a large grain size, in excess of one millimeter, thus making it feasible to implement most experimental measurements, especially, for the case where a large crystal is required. Success in synthesis of high-quality WP crystals at high pressure can offer great opportunities for determining their intrinsic properties and also making more efforts to study the family of transition-metal phosphides.

Keywords: congruent melting tungsten phosphide single crystals high pressure and high temperature

Received: 05 March 2020
Revised: 03 May 2020
Accepted manuscript online:

PACS:	82.75.Fq	(Synthesis, structure determination, structure modeling)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	62.50.-p	(High-pressure effects in solids and liquids)
	61.50.-f	(Structure of bulk crystals)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0401503 and 2018YFA0305700), the National Natural Science Foundation of China (Grant No. 11575288), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2016006). the Key Research Platforms and Research Projects of Universities in Guangdong Province, China (Grant No. 2018KZDXM062), the Guangdong Innovative & Entrepreneurial Research Team Program, China (Grant No. 2016ZT06C279), the Shenzhen Peacock Plan, China (Grant No. KQTD2016053019134356), the Shenzhen Development & Reform Commission Foundation for Novel Nano-Material Sciences, China, the Research Platform for Crystal Growth & Thin-Film Preparation at SUST, China, and the Shenzhen Development and Reform Commission Foundation for Shenzhen Engineering Research Center for Frontier Materials Synthesis at High Pressure, China.

Corresponding Authors: Fang Peng, Fang Peng, Xiao-Hui Yu
E-mail: pengfang@scu.edu.cn;yuxh@iphy.ac.cn;wangsm@sustech.edu.cn

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Xiao-Jun Xiang(向晓君), Guo-Zhu Song(宋国柱), Xue-Feng Zhou(周雪峰), Hao Liang(梁浩), Yue Xu(徐月), Shi-Jun Qin(覃湜俊), Jun-Pu Wang(王俊普), Fang Hong(洪芳), Jian-Hong Dai(戴建红), Bo-Wen Zhou(周博文), Wen-Jia Liang(梁文嘉), Yun-Yu Yin(殷云宇), Yu-Sheng Zhao(赵予生), Fang Peng(彭放), Xiao-Hui Yu(于晓辉), Shan-Min Wang(王善民) Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals 2020 Chin. Phys. B 29 088202

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Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals

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