Inclusions in large diamond single crystals at different temperatures of synthesis

doi:10.1088/1674-1056/28/2/028103

Abstract The inclusions in large diamond single crystals have effects on its ultimate performance, which restricts its industrial applications to a great extent. Therefore, it is necessary to study the inclusions systematically. In this paper, large diamond single crystals with different content values of inclusions are synthesized along the (100) surface by the temperature gradient method (TGM) under 5.6 GPa at different temperatures. With the synthetic temperature changing from 1200℃ to 1270℃, the shapes of diamonds change from plate to low tower, to high tower, even to steeple. From the microscopic photographs of the diamond samples, it can be observed that with the shapes of the samples changing at different temperatures, the content values of inclusions in diamonds become zero, a little, much and most, correspondingly. Consequently, with the temperature growing from low to high, the content values of inclusions in crystals increase. The origin of inclusions is explained by the difference in growth rate between diamond crystal and its surface. The content values of inclusions in diamond samples are quantitatively calculated by testing the densities of diamond samples. And the composition and inclusion content are analyzed by energy dispersive spectroscopy (EDS) and x-ray diffraction (XRD). From contrasting scanning electron microscopy (SEM) photographs, it can be found that the more the inclusions in diamond, the more imperfect the diamond surface is.

Keywords: inclusions large diamond single crystals high pressure and high temperature

Received: 06 September 2018
Revised: 28 November 2018
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	61.72.S-	(Impurities in crystals)
	61.05.C-	(X-ray diffraction and scattering)
	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))

Fund: Project supported by the Natural Science Foundation of Henan Province, China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province, China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province, China (Grant No. 18A430017), the Professional Practice Demonstration Base Program for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province, China (Grant No. 19IRTSTHN027).

Corresponding Authors: Shang-Sheng Li
E-mail: lishsh@hpu.edu.cn

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Fei Han(韩飞), Shang-Sheng Li(李尚升), Xue-Fei Jia(贾雪菲), Wei-Qin Chen(陈玮琴), Tai-Chao Su(宿太超), Mei-Hua Hu(胡美华), Kun-Peng Yu(于昆鹏), Jian-Kang Wang(王健康), Yu-Min Wu(吴玉敏), Hong-An Ma(马红安), Xiao-Peng Jia(贾晓鹏) Inclusions in large diamond single crystals at different temperatures of synthesis 2019 Chin. Phys. B 28 028103

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Inclusions in large diamond single crystals at different temperatures of synthesis

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