1 Department of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China; 2 Hefei National Laboratory for Physical Sciences at the Microscale & Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China
Abstract We report capacitive coupling induced Kondo-Fano (K-F) interference in a double quantum dot (DQD) by systematically investigating its low-temperature properties on the basis of hierarchical equations of motion evaluations. We show that the interdot capacitive coupling U12 splits the singly-occupied (S-O) state in quantum dot 1 (QD1) into three quasi-particle substates: the unshifted S-O0 substate, and elevated S-O1 and S-O2. As U12 increases, S-O2 and S-O1 successively cross through the Kondo resonance state at the Fermi level (ω=0), resulting in the so-called Kondo-I (KI), K-F, and Kondo-II (KII) regimes. While both the KI and KII regimes have the conventional Kondo resonance properties, remarkable Kondo-Fano interference features are shown in the K-F regime. In the view of scattering, we propose that the phase shift η(ω) is suitable for analysis of the Kondo-Fano interference. We present a general approach for calculating η(ω) and applying it to the DQD in the K-F regime where the two maxima of η(ω=0) characterize the interferences between the Kondo resonance state and S-O2 and S-O1 substates, respectively.
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