CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Thermoelectric properties of two-dimensional hexagonal indium-VA |
Jing-Yun Bi(毕京云)1, Li-Hong Han(韩利红)1, Qian Wang(王倩)1, Li-Yuan Wu(伍力源)1, Ruge Quhe(屈贺如歌)1,2, Peng-Fei Lu(芦鹏飞)1,3 |
1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; 2. School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China; 3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m-1·K-1 (InP), 1.31 W·m-1·K-1 (InAs), 0.87 W·m-1·K-1 (InSb), and 0.62 W·m-1 K-1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ < 2 W·m-1·K-1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature.
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Received: 06 September 2017
Revised: 04 November 2017
Accepted manuscript online:
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PACS:
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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63.22.-m
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(Phonons or vibrational states in low-dimensional structures and nanoscale materials)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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84.60.Bk
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(Performance characteristics of energy conversion systems; figure of merit)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900). |
Corresponding Authors:
Ruge Quhe, Peng-Fei Lu
E-mail: quheruge@bupt.edu.cn;photon.bupt@gmail.com
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About author: 68.65.-k; 63.22.-m; 73.40.Kp; 84.60.Bk |
Cite this article:
Jing-Yun Bi(毕京云), Li-Hong Han(韩利红), Qian Wang(王倩), Li-Yuan Wu(伍力源), Ruge Quhe(屈贺如歌), Peng-Fei Lu(芦鹏飞) Thermoelectric properties of two-dimensional hexagonal indium-VA 2018 Chin. Phys. B 27 026802
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