Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO

doi:10.1088/1674-1056/27/11/117802

Abstract

The wide-band-gap II-VI compound semiconductor ZnO is regarded as a promising single-photon emission (SPE) host material. In this work, we demonstrate that a (Ga_Zn-V_Zn)^- complex defect can readily be obtained and the density can be controlled in a certain range. In analogy to nitrogen vacancy centers, such a defect in ZnO is expected to be a new single photon source. The optical properties of the (Ga_Zn-V_Zn)^- complex defect are further studied by photoluminescence and time-resolved photoluminescence spectra measurements. The electron transitions between the defect levels emit light at~650 nm with a lifetime of 10-20 nanoseconds, indicating a good coherent length for SPE. Finally, a two-level emitter structure is proposed to explain the carrier dynamics. We believe that the photodynamics study of the (Ga_Zn-V_Zn)^- complex defect in this work is important for ZnO-based quantum emitters.

Keywords: (Ga_Zn-V_Zn)^- complex defect photoluminescence time-resolved photoluminescence

Received: 22 May 2018
Revised: 02 September 2018
Accepted manuscript online:

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	71.55.-i	(Impurity and defect levels)
	78.55.Et	(II-VI semiconductors)
	61.72.J-	(Point defects and defect clusters)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280).

Corresponding Authors: Zeng-Xia Mei, Xiao-Long Du
E-mail: zxmei@iphy.ac.cn;xldu@iphy.ac.cn

Cite this article:

Ai-Hua Tang(汤爱华), Zeng-Xia Mei(梅增霞), Yao-Nan Hou(侯尧楠), Xiao-Long Du(杜小龙) Photodynamics of Ga_Zn-V_Zn complex defect in Ga-doped ZnO 2018 Chin. Phys. B 27 117802

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Photodynamics of GaZn-VZn complex defect in Ga-doped ZnO

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Photodynamics of Ga_Zn-V_Zn complex defect in Ga-doped ZnO