Room-temperature ferromagnetism observed in Nd-doped In2O3 dilute magnetic semiconducting nanowires

doi:10.1088/1674-1056/25/9/097502

Abstract Nd-doped In₂O₃ nanowires were fabricated by an Au-catalyzed chemical vapor deposition method. Nd atoms were successfully doped into the In₂O₃ host lattice structure, as revealed by energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. Robust room temperature ferromagnetism was observed in Nd-doped In₂O₃ nanowires, which was attributed to the long-range-mediated magnetization among Nd³⁺-vacancy complexes through percolation-bound magnetic polarons.

Keywords: dilute magnetic semiconductor nanowires ferromagnetism oxide

Received: 24 May 2016
Revised: 23 June 2016
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	75.10.-b	(General theory and models of magnetic ordering)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11274003), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, and the Fundamental Research Funds for the Central Universities, China.

Corresponding Authors: Xuefeng Wang
E-mail: xfwang@nju.edu.cn

Cite this article:

Zhanpeng Lv(吕占朋), Junran Zhang(张军然), Wei Niu(钮伟), Minhao Zhang(张敏昊), Li Song(宋丽), Hairong Zhu(朱海荣), Xuefeng Wang(王学锋) Room-temperature ferromagnetism observed in Nd-doped In₂O₃ dilute magnetic semiconducting nanowires 2016 Chin. Phys. B 25 097502

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Room-temperature ferromagnetism observed in Nd-doped In2O3 dilute magnetic semiconducting nanowires

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Room-temperature ferromagnetism observed in Nd-doped In₂O₃ dilute magnetic semiconducting nanowires