Please wait a minute...
Chin. Phys. B, 2016, Vol. 25(11): 118505    DOI: 10.1088/1674-1056/25/11/118505
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Ge Zhu(朱阁)1, Fu Zheng(郑福)2,3, Chao Wang(王超)1,3, Zhibin Sun(孙志斌)3, Guangjie Zhai(翟光杰)3, Qing Zhao(赵清)1
1 School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
Abstract  We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage (Vex) when operated in 1-GHz sinusoidally gated mode. The single-photon avalanche diode was cooled to -30 degrees Celsius. When the Vex is too low (0.2 V-0.8 V) or too high (3 V-4.2 V), the timing jitter is increased with the Vex, particularly at high Vex. While at middle Vex (1 V-2.8 V), the timing jitter is reduced. Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the Vex and the width of the gate-on time. For the 1-GHz sinusoidally gated detector, the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4% and a dark count rate of ~2.08×10-5 per gate at the Vex of 2.8 V. To evaluate the whole performance of the detector, we calculated the noise equivalent power (NEP) and the afterpulse probability (Pap). It is found that both NEP and Pap increase quickly when the Vex is above 2.8 V. At 2.8-V Vex, the NEP and Pap are ~2.06×10-16 W/Hz1/2 and 7.11%, respectively. Therefore, the detector should be operated with Vex of 2.8 V to exploit the fast time response, low NEP and low Pap.
Keywords:  timing jitter      avalanche photodiode      excess bias voltage      single-photon detector  
Received:  26 May 2016      Revised:  07 July 2016      Accepted manuscript online: 
PACS:  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11275024, 61274024, and 61474123), the Youth Innovation Promotion Association, China (Grant No. 2013105), and the Ministry of Science and Technology of China (Grant Nos. 2013YQ030595-3 and 2011AA120101).
Corresponding Authors:  Qing Zhao     E-mail:  qzhaoyuping@bit.edu.cn

Cite this article: 

Ge Zhu(朱阁), Fu Zheng(郑福), Chao Wang(王超), Zhibin Sun(孙志斌), Guangjie Zhai(翟光杰), Qing Zhao(赵清) Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode 2016 Chin. Phys. B 25 118505

[1] Hadfield R H 2009 Nat. Photon. 3 696
[2] Zhang J, Itzler M A, Zbinden H and Pan J W 2015 Light Sci. Appl. 4 e286
[3] Quan D X, Zhu C H, Liu S Q and Pei C X 2015 Chin. Phys. B 24 050309
[4] Jiao R Z, Feng C X and Ma H Q 2008 Acta. Phys. Sin. 57 1352(in Chinese)
[5] McCarthy A, Krichel N J, Gemmell N R, Ren X, Tanner M G, Dorenbos S N, Zwiller V, Hadfield R H and Buller G S 2013 Opt. Express 21 8904
[6] Chen S J, Liu D K, Zhang W X, You L X, He Y H, Zhang W J, Yang X Y, Wu G, Ren M, Zeng H P, Wang Z, Xie X M and Jiang M H 2013 Appl. Opt. 52 3241
[7] Zhou H, He Y H, You L X, Chen S J, Zhang W J, Wu J J, Wang Z and Xie X M 2015 Opt. Express 23 14603
[8] Ren M, Gu X R, Liang Y, Kong W B, Wu E, Wu G and Zeng H P 2011 Opt. Express 19 13497
[9] Liang Y, Huang J H, Ren M, Feng B C, Chen X L, Wu E, Wu G and Zeng H P 2014 Opt. Express 22 4662
[10] Stellari F, Tosi A, Zappa F and Cova S 2004 IEEE Trans. Instrum. Meas. 53 163
[11] Levine B F, Bethea C G and Campbell J C 1984 Electron. Lett. 20 596
[12] Namekata N, Takesue H, Honjo T, Tokura Y and Inoue S 2011 Opt. Express 19 10632
[13] Zhang J, Eraerds P, Walenta N, Barreiro C, Thew R and Zbinden H 2010 Proc. SPIE 76810Z-1
[14] Dixon A R, Yuan Z L, Dynes J F, Sharpe A W and Shields A J 2008 Opt. Express 16 18790
[15] Natarajan C M, Tanner M G and Hadfield R H 2012 Supercond. Sci. Technol. 25 063001
[16] Ribordy G, Gisin N, Guinnard O, Stuck D, Wegmuller M and Zbinden H 2004 J. Mod. Opt. 51 1381
[17] Namekata N, Adachi S and Inoue S 2009 Opt. Express 17 6275
[18] Yuan Z L, Kardynal B E, Sharpe A W and Shields A J 2007 Appl. Phys. Lett. 91 041114
[19] Zhang J, Thew R, Barreiro C and Zbinden H 2009 Appl. Phys. Lett. 95 091103
[20] Campbell J C, Sun W L, Lu Z W, Itzler M A and Jiang X D 2012 IEEE J. Quant. Electron. 48 1505
[21] Restelli A, Bienfang J C and Migdall A L 2013 Appl. Phys. Lett. 102 141104-1
[22] Liang Y, Wu E, Chen X L, Ren M, Jian Y, Wu G and Zeng H P 2011 IEEE Photon. Technol. Lett. 23 887
[23] Ren M, Liang Y, Sun W L, Wu G, Campbell J C and Zeng H P 2014 IEEE Photon. Technol. Lett. 26 1762
[24] Lacaita A, Mastrapasqua M, Ghioni M and Vanoli S 1990 Appl. Phys. Lett. 57 489
[25] Farr W H and Birnbaum K 2010 Proc. SPIE 76810U-1
[26] Gulinatti A, Maccagnani P, Rech I, Ghioni M and Cova S 2005 Electron. Lett. 41 272
[27] Ingargiola A, Assanelli M, Gallivanoni A, Rech I, Ghioni M and Cova S 2009 Proc. SPIE 73200K-1
[28] Sun Z B, Ma H Q, Lei M, Yang H D, Wu L A, Zhai G J and Feng J 2007 Acta. Phys. Sin. 56 5790(in Chinese)
[29] Zheng F, Wang C, Sun Z B and Zhai G J 2016 Chin. Phys. B 25 010306
[1] Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes
Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Chin. Phys. B, 2023, 32(3): 038502.
[2] Spatially modulated scene illumination for intensity-compensated two-dimensional array photon-counting LiDAR imaging
Jiaheng Xie(谢佳衡), Zijing Zhang(张子静), Mingwei Huang(黄明维),Jiahuan Li(李家欢), Fan Jia(贾凡), and Yuan Zhao(赵远). Chin. Phys. B, 2022, 31(9): 090701.
[3] Temperature and current sensitivity extraction of optical superconducting transition-edge sensors based on a two-fluid model
Yue Geng(耿悦), Pei-Zhan Li(李佩展), Jia-Qiang Zhong(钟家强), Wen Zhang(张文), Zheng Wang(王争), Wei Miao(缪巍), Yuan Ren(任远), and Sheng-Cai Shi(史生才). Chin. Phys. B, 2021, 30(9): 098501.
[4] Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure
Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰). Chin. Phys. B, 2020, 29(8): 088502.
[5] Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇). Chin. Phys. B, 2020, 29(11): 117301.
[6] Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(9): 098503.
[7] Wavelength dependence of intrinsic detection efficiency of NbN superconducting nanowire single-photon detector
Yong Wang(王勇), Hao Li(李浩), Li-Xing You(尤立星), Chao-Lin Lv(吕超林), He-Qing Wang(王河清), Xing-Yu Zhang(张兴雨), Wei-Jun Zhang(张伟君), Hui Zhou(周慧), Lu Zhang(张露), Xiao-Yan Yang(杨晓燕), Zhen Wang(王镇). Chin. Phys. B, 2019, 28(7): 078502.
[8] Controlling a sine wave gating single-photon detector by exploiting its filtering loophole
Lin-Xi Feng(冯林溪), Mu-Sheng Jiang(江木生), Wan-Su Bao(鲍皖苏), Hong-Wei Li(李宏伟), Chun Zhou(周淳), Yang Wang(汪洋). Chin. Phys. B, 2018, 27(8): 080305.
[9] Countermeasure against probabilistic blinding attack in practical quantum key distribution systems
Qian Yong-Jun (钱泳君), Li Hong-Wei (李宏伟), He De-Yong (何德勇), Yin Zhen-Qiang (银振强), Zhang Chun-Mei (张春梅), Chen Wei (陈巍), Wang Shuang (王双), Han Zheng-Fu (韩正甫). Chin. Phys. B, 2015, 24(9): 090305.
[10] Performance of superconducting nanowire single-photon detector with the fan coupling antenna array
Wang Yu-Jue (王玉珏), Ding Tian (丁天), Ma Hai-Qiang (马海强), Jiao Rong-Zhen (焦荣珍). Chin. Phys. B, 2014, 23(6): 060308.
[11] Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector
Dong Yu (董宇), Wang Guang-Long (王广龙), Wang Hong-Pei (王红培), Ni Hai-Qiao (倪海桥), Chen Jian-Hui (陈建辉), Gao Feng-Qi (高凤岐), Qiao Zhong-Tao (乔中涛), Yang Xiao-Hong (杨晓红), Niu Zhi-Chuan (牛智川). Chin. Phys. B, 2014, 23(10): 104209.
[12] Soliton-like pulse timing jitter in dispersion-managed systems
Li Qi-Liang(李齐良), Li Qing-Shan(李庆山), and Lin Li-Bin(林理彬). Chin. Phys. B, 2006, 15(10): 2306-2314.
No Suggested Reading articles found!