Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

doi:10.1088/1674-1056/24/7/077502

Abstract Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO (001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300 K to 80 K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K₁, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant K_U are responsible for this transformation. The strengths of K₁ and domain wall pinning energy increase with decreasing temperature, but K_U remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90° domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO(001) films at different temperatures.

Keywords: multi-jump magnetic switching process magnetoresistance domain wall

Received: 19 March 2015
Revised: 14 April 2015
Accepted manuscript online:

PACS:	75.30.Gw	(Magnetic anisotropy)
	75.60.Jk	(Magnetization reversal mechanisms)
	75.60.Ch	(Domain walls and domain structure)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403, 2011CB921801, and 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 11274361).

Corresponding Authors: Cheng Zhao-Hua
E-mail: zhcheng@aphy.iphy.ac.cn

Cite this article:

Hu Bo (胡泊), He Wei (何为), Ye Jun (叶军), Tang Jin (汤进), Zhang Yong-Sheng (张永圣), Syed Sheraz Ahmad, Zhang Xiang-Qun (张向群), Cheng Zhao-Hua (成昭华) Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films 2015 Chin. Phys. B 24 077502

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Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

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