Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

doi:10.1088/1674-1056/23/9/097703

Abstract Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N₂. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (Li_Zn) acceptor. N doping in ZnO can forms the Li_i-N_O complex, which depresses the compensation of Li occupy interstitial site (Li_i) donors for Li_Zn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors Li_Zn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.

Keywords: ZnO ion beam enhanced deposition photoluminescence

Received: 21 March 2014
Revised: 16 May 2014
Accepted manuscript online:

PACS:	77.55.hf	(ZnO)
	81.15.Jj	(Ion and electron beam-assisted deposition; ion plating)
	78.55.-m	(Photoluminescence, properties and materials)

Corresponding Authors: Chen Qiang
E-mail: dishuimolan@163.com

Cite this article:

Xie Jian-Sheng (谢建生), Chen Qiang Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method 2014 Chin. Phys. B 23 097703

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Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

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