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Chin. Phys. B, 2014, Vol. 23(7): 077801    DOI: 10.1088/1674-1056/23/7/077801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

What has been measured by reflection magnetic circular dichroism in Ga1-xMnxAs/GaAs structures?

He Zhen-Xin (贺振鑫), Zheng Hou-Zhi (郑厚植), Huang Xue-Jiao (黄学骄), Wang Hai-Long (王海龙), Zhao Jian-Hua (赵建华)
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  An explicit expression of reflection magnetic circular dichroism (RMCD) has been derived, taking into account the interference effect that arises from multiple internal reflections in an air/Ga1-xMnxAs/GaAs dielectric layered system. It unambiguously shows that the RMCD signal is composed by three terms. In addition to the conventional term, which is sufficient in the absence of interference, an oscillatory term is required. Both of them are related to the imaginary part ε"xy of the off-diagonal element of the dielectric tensor. One also becomes aware that in this case RMCD is not actually determined only by the imaginary part ε"xy of the off-diagonal element of the dielectric tensor, as has been widely accepted. In fact, the real part ε'xy of the off-diagonal element will substantially mix into the measured RMCD results by another oscillatory cosθ form. It can even reverse the sign of RMCD, when the Ga1-xMnxAs layer becomes thicker. The main aspects of these predictions were used to reasonably explain the RMCD results measured in three different types of samples. Our work will bring about a reconsideration of how to correctly explain RMCD results.
Keywords:  magneto-optical effects      magnetic semiconductors      optical properties      Ⅲ-Ⅴ compounds  
Received:  11 December 2013      Revised:  14 March 2014      Accepted manuscript online: 
PACS:  78.20.Ls (Magneto-optical effects)  
  75.50.Pp (Magnetic semiconductors)  
  78.66.Fd (III-V semiconductors)  
  42.25.Hz (Interference)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB932901).
Corresponding Authors:  Zheng Hou-Zhi     E-mail:  hzzheng@red.semi.ac.cn
About author:  78.20.Ls; 75.50.Pp; 78.66.Fd; 42.25.Hz

Cite this article: 

He Zhen-Xin (贺振鑫), Zheng Hou-Zhi (郑厚植), Huang Xue-Jiao (黄学骄), Wang Hai-Long (王海龙), Zhao Jian-Hua (赵建华) What has been measured by reflection magnetic circular dichroism in Ga1-xMnxAs/GaAs structures? 2014 Chin. Phys. B 23 077801

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