CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique |
Liao Xue-Yang (廖雪阳)a b, Zhang Kai (张凯)b, Zeng Chang (曾畅)a, Zheng Xue-Feng (郑雪峰)b, En Yun-Fei (恩云飞)a, Lai Ping (来萍)a, Hao Yue (郝跃)b |
a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, the 5th Electronics Research Instituteof the Ministry of Industry and Information Technology, Guangzhou 510610, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
|
|
Abstract Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).
|
Received: 25 April 2013
Revised: 23 October 2013
Accepted manuscript online:
|
PACS:
|
73.20.-r
|
(Electron states at surfaces and interfaces)
|
|
73.20.At
|
(Surface states, band structure, electron density of states)
|
|
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606). |
Corresponding Authors:
Liao Xue-Yang
E-mail: vicki_216@163.com
|
About author: 73.20.-r; 73.20.At; 73.40.Kp; 73.40.Qv |
Cite this article:
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique 2014 Chin. Phys. B 23 057301
|
[1] |
Huang L H and Lee C T 2007 J. Electrochem. Soc. 154 H862
|
[2] |
Ostermaier C, Lee H C, Hyun S Y, Ahn S I, Kim K W, Cho H I, Ha J B and Lee J H 2008 Phys. Stat. Solid C 5 1992
|
[3] |
Freedsman J J, Kubo T, Selvaraj S L and Egawa T 2011 Jpn. J. Appl. Phys. 50 04DF03
|
[4] |
Yue Y Z, Hao Y and Zhang J C 2008 Chin. Phys. B 17 140505
|
[5] |
Bi Z W, Feng Q and Hao Y 2010 Chin. Phys. B 19 077303
|
[6] |
Wang Z G, Chen Y F and Chen C 2010 Chin. Phys. B 19 107305
|
[7] |
Okino T, Ochiai M, Ohno Y, Kishimoto S, Maezawa K and Mizutani T 2004 IEEE Electron Device Lett. 25 523
|
[8] |
Miller E J, Dang X Z and Wieder H H 2000 J. Appl. Phys. 87 8070
|
[9] |
Quan S, Hao Y and Ma X H 2011 Chin. Phys. B 20 018101
|
[10] |
Shih H, Kudo M and Suzuki T 2012 Appl. Phys. Lett. 101 043501
|
[11] |
Chu R M, Zhou Y G, Chen K J and Lau K M 2003 Phys. Stat. Sol. 07 2400
|
[12] |
Sze S M and Kwok K N 2008 Physics of Semiconductor Devices (3rd edn.) (Xi'an: Xi'an Jiaotong University Press)
|
[13] |
Nicollian E H and J R Brews 1982 MOS Physics and Technology (New York: Wiley)
|
[14] |
Gregušová D, Stoklas R and Mizue Ch 2010 J. Appl. Phys. 107 106104
|
[15] |
Freedsman J J, Kubo T and Egawa T 2011 Appl. Phys. Lett. 99 033504
|
[16] |
Kordoš P, Stoklas R and Gregušová D, Gaži Š and Novák J 2010 Appl. Phys. Lett. 96 013505
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|