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Chin. Phys. B, 2014, Vol. 23(5): 057301    DOI: 10.1088/1674-1056/23/5/057301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Liao Xue-Yang (廖雪阳)a b, Zhang Kai (张凯)b, Zeng Chang (曾畅)a, Zheng Xue-Feng (郑雪峰)b, En Yun-Fei (恩云飞)a, Lai Ping (来萍)a, Hao Yue (郝跃)b
a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, the 5th Electronics Research Instituteof the Ministry of Industry and Information Technology, Guangzhou 510610, China;
b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).
Keywords:  Al2O3/AlGaN/GaN      interface trap states      conductance      capacitance  
Received:  25 April 2013      Revised:  23 October 2013      Accepted manuscript online: 
PACS:  73.20.-r (Electron states at surfaces and interfaces)  
  73.20.At (Surface states, band structure, electron density of states)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).
Corresponding Authors:  Liao Xue-Yang     E-mail:  vicki_216@163.com
About author:  73.20.-r; 73.20.At; 73.40.Kp; 73.40.Qv

Cite this article: 

Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique 2014 Chin. Phys. B 23 057301

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