Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

doi:10.1088/1674-1056/23/5/057103

Abstract ZnCo₂O₄/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo₂O₄/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveal that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm² and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the photovoltage peak of the heterostructures decreases with the increase of the temperature. This work may open new perspectives for ZnCo₂O₄/Si heterostructure-based devices.

Keywords: ZnCo₂O₄/Si heterostructure rectifying behavior photovoltaic properties pusled laser deposition

Received: 17 September 2013
Revised: 20 October 2013
Accepted manuscript online:

PACS:	71.55.Gs	(II-VI semiconductors)
	72.40.+w	(Photoconduction and photovoltaic effects)
	73.40.Ei	(Rectification)
	81.15.Fg	(Pulsed laser ablation deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61078057), the Natural Science Foundation of Shannxi Province, China (Grant No. 2011GM6013), the Northwestern Polytechnical University Foundation for Fundamental Research, China (Grant Nos. JC20110270 and JC201271), and the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, China (Grant No. LZUMMM2013001).

Corresponding Authors: Chen Zhao
E-mail: zhaoch17@hotmail.com

About author: 2014-3-26

Cite this article:

Chen Zhao (陈钊), Wen Xiao-Li (温晓莉), Niu Li-Wei (牛利伟), Duan Meng-Meng (段萌萌), Zhang Yun-Jie (张云捷), Dong Xiang-Lei (董祥雷), Chen Chang-Le (陈长乐) Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition 2014 Chin. Phys. B 23 057103

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Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

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Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition