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Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor |
| Huang Da (黄达)a b, Wu Jun-Jie (吴俊杰)b, Tang Yu-Hua (唐玉华)b |
a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
b School of Computer, National University of Defense Technology, Changsha 410073, China |
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Abstract With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.
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Received: 21 June 2013
Revised: 14 August 2013
Accepted manuscript online:
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PACS:
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84.32.-y
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(Passive circuit components)
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89.20.Ff
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(Computer science and technology)
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60921062). |
Corresponding Authors:
Huang Da
E-mail: huangda1109@163.com
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Cite this article:
Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华) Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor 2014 Chin. Phys. B 23 038404
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