Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

doi:10.1088/1674-1056/22/3/038401

Abstract With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor brings much attention to this study. Those researches focus on resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are present. We give the prospect of different materials used in resistive RAM on account of resistive switching mechanisms, which are applied to explain their resistive switchings.

Keywords: resistive random-access memory resistive switching mechanism circuit model

Received: 14 May 2012
Revised: 21 August 2012
Accepted manuscript online:

PACS:	84.32.-y	(Passive circuit components)
	89.20.Ff	(Computer science and technology)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60921062).

Corresponding Authors: Huang Da
E-mail: huangda1109@163.com

Cite this article:

Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华) Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory 2013 Chin. Phys. B 22 038401

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Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

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