Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

doi:10.1088/1674-1056/23/11/117304

Abstract

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze the role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with V_b decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias V_g. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.

Keywords: substrate hot electron injection hot carrier injection (HCI) degradation interface trap oxide trapped charge

Received: 07 April 2014
Revised: 05 June 2014
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61376109) and the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, China (Grant No. ZHD201202).

Corresponding Authors: Chen Jian-Jun
E-mail: cjj192000@yahoo.com.cn

Cite this article:

Liang Bin (梁斌), Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆) Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET 2014 Chin. Phys. B 23 117304

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Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

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