Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer

doi:10.1088/1674-1056/22/9/097301

Abstract A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO₂ as gate dielectric and silicon nitride (SiN_x) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiN_x IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785×10^-6 A/cm² at V_fb+1 V) and lower interface-state density (2.9×10¹² eV^-1·cm^-2) compared with other samples with N_2- or NH_3- plasma pretreatment. The influences of postdeposition annealing temperature on electrical properties are also investigated for the samples with SiN_x IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.

Keywords: GaAs metal-oxide-semiconductor (MOS) devices silicon nitride interlayer post-deposition annealing

Received: 11 April 2013
Revised: 15 May 2013
Accepted manuscript online:

PACS:	73.20.Qt	(Electron solids)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176100).

Corresponding Authors: Xu Jing-Ping
E-mail: jpxu@mail.hust.edu.cn

Cite this article:

Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑) Improved interface properties of an HfO₂ gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer 2013 Chin. Phys. B 22 097301

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Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer

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Improved interface properties of an HfO₂ gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer