The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis

doi:10.1088/1674-1056/22/8/088501

Abstract In many communication and signal routing applications, it is desirable to have a programmable analog filter. According to this practical demand, we consider the titanium oxide memristor, which is a kind of nano-scale electron device with low power dissipation and nonvolatile memory. Such characteristics could be suitable for designing the desired filter. However, both the non-analytical relation between the memristance and the charges that pass through it, and the changeable V-I characteristics in physical tests make it difficult to accurately set the memristance to the target value. In this paper, the conductive mechanism of the memristor is analyzed, a method of continuously programming the memristance is proposed and simulated in a simulation program with integrated circuit emphasis, and its feasibility and compatibility, both in simulations and physical realizations, are demonstrated. This method is then utilized in a first-order active filter as an example to show its applications in programmable filters. This work also provides a practical tool for utilizing memristors as resistance programmable devices.

Keywords: memristor programmable filter dopant drift SPICE

Received: 31 October 2012
Revised: 22 December 2012
Accepted manuscript online:

PACS:	85.35.-p	(Nanoelectronic devices)
	84.30.Vn	(Filters)
	87.85.Qr	(Nanotechnologies-design)
	89.20.Ff	(Computer science and technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61171017 and F010505).

Corresponding Authors: Tian Xiao-Bo
E-mail: txiaobo1985@gmail.com

Cite this article:

Tian Xiao-Bo (田晓波), Xu Hui (徐晖) The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis 2013 Chin. Phys. B 22 088501

[1]	Zhou J and Huang D 2012 Chin. Phys. B 21 048401
[2]	Duan S K, Hu X F, Wang L D, Li C D and Pinaki M 2012 Sci. China: Inf. Sci. 55 1446
[3]	Kim H, Sah M P, Yang C, Roska T and Chua L O 2011 IEEE Trans. Circ. Sys. 59 148
[4]	Raja T and Mourad S 2009 International Conference on Communications, Circuits and Systems, July 23-25, 2009, Milpitas, California, USA, p. 939
[5]	Shin S, Kim K and Kang S M 2011 IEEE Trans. Nanotechnol. 10 266
[6]	Bao B C, Liu Z and Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese)
[7]	Bao B C, Xu J P, Zhou G H, Ma Z H and Zou L 2011 Chin. Phys. B 20 120502
[8]	Chua L O 1971 IEEE Trans. Circ. Theory 18 507
[9]	Chua L O and Kang S M 1976 Proceedings of the IEEE 64 209
[10]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
[11]	Song D H, Lü M F, Ren X, Li M M and Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese)
[12]	Zhang X, Zhou Y Z, Bi Q, Yang X H and Zu Y X 2010 Acta Phys. Sin. 59 6674 (in Chinese)
[13]	Bao B C, Xu J P and Liu Z 2010 Chin. Phys. Lett. 27 070504
[14]	Bao B C, Liu Z and Xu J P 2010 Chin. Phys. B 19 030510
[15]	Strachan J P, Kuekes P J and Ribeiro G M 2012 US Patent 2012/0105143 A1 [2012-5-3]
[16]	Torrezan A C, Strachan J P, Ribeiro G M and Williams R S 2011 Nanotechnology 22 485203
[17]	Driscoll T, Quinn J, Klein S, Kim H T, Kim B J, Pershin Y V, Ventra M D and Basov D N 2010 Appl. Phys. Lett. 97 093502
[18]	Wang W D, Yu Q, Xu C and Cui Y 2009 International Conference on Communications, Circuits and Systems, July 23-25, 2009, California, USA, p. 969
[19]	Fang X D, Tang Y H and Wu J J 2012 Chin. Phys. B 21 098901
[20]	Williams R S 2008 Spectrum IEEE 45 28
[21]	Stewart D R, Ohlberg D A A, Beck P A, Chen Y and Williams R S 2004 Nano Lett. 4 133
[22]	Pickett M D, Strukov D B, Borghetti J L, Yang J J, Snider G S, Stewart D R and Williams R S 2009 J. Appl. Phys. 106 074508
[23]	Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R and Williams R S 2008 Nat. Nanotechnol. 3 429
[24]	Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N and Williams R S 2009 Nanotechnology 20 215201
[25]	Kim H, Sah M P, Yang C and Chua L O 2010 12th International Workshop on Cellular Nanoscale Networks and Their Applications, February 3-5, 2010, Berkeley, USA, p. 1

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The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis

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