Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells

doi:10.1088/1674-1056/22/5/057302

Abstract The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multi-quantum wells (MQWs) have been investigated by solving the Schrödinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.

Keywords: intersubband transition polarization electron subband levels AlGaN/GaN quantum well

Received: 03 September 2012
Revised: 21 October 2012
Accepted manuscript online:

PACS:	73.21.Fg	(Quantum wells)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	71.55.Fq

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204), the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150), and the China Postdoctoral Science Foundation (Grant No. 20100480064).

Corresponding Authors: Xiong Hui
E-mail: hsiung.hust@gmail.com

Cite this article:

Tian Wu (田武), Yan Wei-Yi (鄢伟一), Xiong Hui (熊晖), Dai Jian-Nan (戴江南), Fang Yan-Yan (方妍妍), Wu Zhi-Hao (吴志浩), Yu Chen-Hui (余晨辉), Chen Chang-Qin (陈长清) Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells 2013 Chin. Phys. B 22 057302

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Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells

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Effects of polarization on intersubband transitions of Al_xGa_1-xN/GaN multi-quantum wells