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Chin. Phys. B, 2012, Vol. 21(8): 087701    DOI: 10.1088/1674-1056/21/8/087701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric

Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang(吕红亮), Wang Yue-Hu (王悦湖 )
School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.
Keywords:  4H-SiC      Al2O3      high-k dielectric  
Received:  10 February 2012      Revised:  22 February 2012      Accepted manuscript online: 
PACS:  77.22.Jp (Dielectric breakdown and space-charge effects)  
  73.20.-r (Electron states at surfaces and interfaces)  
  77.84.Lf (Composite materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006060 and 61176070).
Corresponding Authors:  Tang Xiao-Yan     E-mail:  xytang@mail.xidian.edu.cn

Cite this article: 

Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang (吕红亮), Wang Yue-Hu (王悦湖 ) Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric 2012 Chin. Phys. B 21 087701

[1] Hino S, Hatayama T, Kato J, Tokumitsu E, Miura N and Oomori T 2008 Appl. Phys. Lett. 92 183503
[2] Tang X Y, Zhang Y M and Zhang Y M 2010 Chin. Phys. B 19 047204
[3] Lichtenwalner D J, Misra V, Dhar S, Ryu S H and Agurwal A 2009 Appl. Phys. Lett. 95 152113
[4] Posadas A, Walker F J, Ahn C H, Goodrich T L, Cai Z and Ziemer K S 2008 Appl. Phys. Lett. 92 233511
[5] Tanner C M, Choi J and Chang J P 2007 J. Appl. Phys. 101 034108
[6] Mahapatra R, Chakraborty A K, Poolamai N, Horsfall A and Chattopadhyay S 2007 J. Vac. Sci. Technol. B 25 217
[7] Kumta A, Rusli and Xia J H 2007 Appl. Phys. Lett. 2007 94 233505
[8] Cheong K Y, Moon J H and Eom D 2007 Electrochem. Solid-State Lett. 10 H69
[9] Ji F, Xu J P and Lai P T 2007 Chin. Phys. 16 1757
[10] Pantelides 2006 Mater. Sci. Forum 527-529 935
[11] Suri R, Kirkpatrick C J, Lichtenwalner D J and Misra V 2010 Appl. Phys. Lett. 96 042903
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