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Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric |
Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang(吕红亮), Wang Yue-Hu (王悦湖 ) |
School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.
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Received: 10 February 2012
Revised: 22 February 2012
Accepted manuscript online:
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PACS:
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77.22.Jp
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(Dielectric breakdown and space-charge effects)
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73.20.-r
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(Electron states at surfaces and interfaces)
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77.84.Lf
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(Composite materials)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006060 and 61176070). |
Corresponding Authors:
Tang Xiao-Yan
E-mail: xytang@mail.xidian.edu.cn
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Cite this article:
Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang (吕红亮), Wang Yue-Hu (王悦湖 ) Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric 2012 Chin. Phys. B 21 087701
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