Thermal analysis of GaN laser diodes in a package structure

doi:10.1088/1674-1056/21/8/084209

Abstract Using the finite-element method, the thermal resistances of GaN laser diode devices in TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

Keywords: laser diodes thermal GaN

Received: 15 December 2011
Revised: 21 February 2012
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	61.72.uj	(III-V and II-VI semiconductors)
	68.60.Dv	(Thermal stability; thermal effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60976045, 60836003, 60776047, and 61076119), the National Basic Research Program of China (Grant No. 2007CB936700), and the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China (Grant No. 60925017).

Corresponding Authors: Feng Mei-Xin
E-mail: fengmeixin@semi.ac.cn

Cite this article:

Feng Mei-Xin (冯美鑫), Zhang Shu-Ming (张书明), Jiang De-Sheng (江徳生), Liu Jian-Ping (刘建平), Wang Hui (王辉), Zeng Chang (曾畅), Li Zeng-Cheng (李增成), Wang Huai-Bing (王怀兵), Wang Feng (王峰), Yang Hui (杨辉) Thermal analysis of GaN laser diodes in a package structure 2012 Chin. Phys. B 21 084209

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Thermal analysis of GaN laser diodes in a package structure

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