Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure

doi:10.1088/1674-1056/21/7/077402

Abstract A Raman frequency upshift of nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO₂ (3 nm) layers are deposited by high vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N₂ atmosphere at 1100 ℃ for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high grown temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in thermal expansion coefficient between the substrate and the Si/SiO₂ SL film. Such a substrate-induced stress indicates a new method to tune the optical and the electronic properties of Si nanocrystals for strained engineering.

Keywords: stress Raman spectrum silicon nanocrystal sputtering

Received: 22 November 2011
Revised: 13 December 2011
Accepted manuscript online:

PACS:	74.25.nd	(Raman and optical spectroscopy)
	61.46.Df	(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61021003, 61036001, and 51072194) and the Foundation of Chinese Academy of Sciences.

Corresponding Authors: Zuo Yu-Hua
E-mail: yhzuo@semi.ac.cn

Cite this article:

Tao Ye-Liao(陶也了), Zuo Yu-Hua(左玉华), Zheng Jun(郑军), Xue Chun-Lai(薛春来), Cheng Bu-Wen(成步文), Wang Qi-Ming(王启明), and Xu Jun(徐骏) Substrate-induced stress in silicon nanocrystal/SiO₂ multilayer structure 2012 Chin. Phys. B 21 077402

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Substrate-induced stress in silicon nanocrystal/SiO₂ multilayer structure