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Analytical model of signal amplification in silicon waveguides |
Meng Fan(孟凡)†, Yu Chong-Xiu(余重秀), and Yuan Jin-Hui(苑金辉) |
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Post and Telecommunications, Beijing 100876, China |
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Abstract In this paper, an analytical model to investigate the parametric amplification (PA) and the PA + stimulated Raman scattering (SRS) in silicon waveguides is put forward. When two pump signals are employed, the PA bandwidth of the probe signal is so large that the Raman contribution has to be considered. When Raman contribution fraction f is set to be 0, only the PA occurs to amplify the probe signal, and when f is set to be 0.043, the PA and the SRS amplify the probe signal at the same time. The signal amplifications of both single and dual pump schemes are investigated by using this model. With this model, three main affecting factors, i.e., zero dispersion wavelength (ZDWL), third-order dispersion (TOD), and fourth-order dispersion (FOD), are discussed in detail.
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Received: 16 November 2011
Revised: 02 January 2012
Accepted manuscript online:
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PACS:
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42.65.Yj
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(Optical parametric oscillators and amplifiers)
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42.82.Et
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(Waveguides, couplers, and arrays)
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42.65.Dr
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(Stimulated Raman scattering; CARS)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327605), the Discipline Co-construction Project of Beijing Municipal Commission of Education, China (Grant No. YB20081001301), and the Fundamental Research Funds for Central Universities, China (Grant No. 2011RC008). |
Corresponding Authors:
Meng Fan
E-mail: mengfan3426@gmail.com
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Cite this article:
Meng Fan(孟凡), Yu Chong-Xiu(余重秀), and Yuan Jin-Hui(苑金辉) Analytical model of signal amplification in silicon waveguides 2012 Chin. Phys. B 21 074207
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