Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

doi:10.1088/1674-1056/21/12/128501

Abstract In this study, physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for U-gate device. U-gate AlGaN/GaN HEMTs are of great feasibility through adjusting the etching conditions of inductively coupled plasma system, without introducing any extra process step. The simulation results are confirmed by the experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for millimeter-wave power application.

Keywords: AlGaN/GaN HEMT breakdown characteristics millimeter-wave U-type gate foot

Received: 22 March 2012
Revised: 01 June 2012
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	85.30.Tv	(Field effect devices)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 60890191) and the National Key Basic Research Program of China (Grant No. 2010CB327503).

Corresponding Authors: Liu Xin-Yu
E-mail: xyliu@ime.ac.cn

Cite this article:

Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application 2012 Chin. Phys. B 21 128501

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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application

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