The response of temperature and hydrostatic pressure of zinc-blende GaxIn1-xAs semiconducting alloys

doi:10.1088/1674-1056/21/12/126101

Abstract The electronic band structure of Ga_xIn_1-xAs alloy is calculated by the local empirical pseudo-potential method including the effective disorder potential in the virtual crystal approximation. The compositional effect of the electronic energy band structure of this alloy is studied with composition x ranging from 0 to 1. Various physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different Ga concentrations are calculated. The effects of both temperature and hydrostatic pressure on the calculated quantities are studied. The obtained results are found o be in good agreement with the available experimental and published data.

Keywords: temperature hydrostatic pressure to Ga_xIn_1-xAs alloys

Received: 24 April 2012
Revised: 09 June 2012
Accepted manuscript online:

PACS:	61.66.Dk	(Alloys )
	61.82.Fk	(Semiconductors)
	73.20.At	(Surface states, band structure, electron density of states)
	71.15.Dx	(Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction))

Corresponding Authors: E. B. Elkenany
E-mail: kena@mans.edu.eg

Cite this article:

A. R. Degheidy, E. B. Elkenany The response of temperature and hydrostatic pressure of zinc-blende Ga_xIn_1-xAs semiconducting alloys 2012 Chin. Phys. B 21 126101

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The response of temperature and hydrostatic pressure of zinc-blende GaxIn1-xAs semiconducting alloys

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The response of temperature and hydrostatic pressure of zinc-blende Ga_xIn_1-xAs semiconducting alloys