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Quantum dots-templated growth of strain-relaxed GaN on a c-plane sapphire by radio-frequency molecular beam epitaxy |
Guo Hao-Min (郭浩民), Wen Long (文龙), Zhao Zhi-Fei (赵志飞), Bu Shao-Jiang (步绍姜), Li Xin-Hua (李新化), Wang Yu-Qi (王玉琦) |
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
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Abstract We investigated the quantum dots-templated growth of a (0001) GaN film on a c-plane sapphire substrate. The growth was carried out in a radio-frequency molecular beam epitaxy system. The enlargement and coalescence of grains on the GaN quantum dots template was observed in the atom force microscopy images, as well as the more ideal surface morphology of the GaN epitaxial film on the quantum dots template compared with the one on the AlN buffer. The Ga polarity was confirmed by the reflected high energy electron diffraction patterns and the Raman spectra. The significant strain relaxation in the quantum dots-templated GaN film was calculated based on the Raman spectra and the X-ray rocking curves. Meanwhile, the threading dislocation density in the quantum dots-templated film was estimated to be 7.1×107 cm-2, which was significantly suppressed compared with that of the AlN-buffered GaN film. The room-temperature Hall measurement showed an electron mobility of up to 1860 cm2/V·s in the two-dimensional electron gas at the interface of the Al0.25Ga0.75N/GaN heterojunction.
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Received: 30 March 2012
Revised: 18 April 2012
Accepted manuscript online:
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PACS:
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81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.72.Hh
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(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 1179042). |
Corresponding Authors:
Li Xin-Hua
E-mail: xinhuali@issp.ac.cn
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Cite this article:
Guo Hao-Min (郭浩民), Wen Long (文龙), Zhao Zhi-Fei (赵志飞), Bu Shao-Jiang (步绍姜), Li Xin-Hua (李新化), Wang Yu-Qi (王玉琦) Quantum dots-templated growth of strain-relaxed GaN on a c-plane sapphire by radio-frequency molecular beam epitaxy 2012 Chin. Phys. B 21 108101
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[1] |
Pearton S J, Zolper J C and Shul R J 1999 J. Appl. Phys. 86 1
|
[2] |
Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
|
[3] |
Lim Wantae, Jeong Jae-Hyun, Lee Jae-Hoon, Hur Seung-Bae, Ryu Jong-Kyu, Kim Ki-Se, Kim Tae-Hyung, Song Sang Yeob, Yang Jong-In and Pearton S J 2011 Appl. Phys. Lett. 97 242103
|
[4] |
Speck J S and Rosner S J 1999 Physica B 274 24
|
[5] |
Qiu K, Zhong F, Li X H, Yin Z J, Ji C J, Han Q F, Chen J R, Cao X C and Wang Y Q 2007 Chin. Phys. 16 282
|
[6] |
Shen X Q, Ide T, Cho S H, Shimizu M, Hara S, Okumura H, Sonoda S and Shimizu S 2000 J Cryst. Growth 218 155
|
[7] |
Smith A R, Feenstra R M, Greve D W, Negebauer J and Northrup J E 1997 Phys. Rev. Lett. 79 3934
|
[8] |
Zhong F, Qiu K, Li X H, Yin Z J, Xie X J, Wang Y, Ji C J, Cao X C, Han Q F, Chen J R and Wang Y Q 2007 Chin. Phys. Lett. 24 240
|
[9] |
Craven M D, Lim S H, Wu F, Speck J S and DenBaars S P 2002 Appl. Phys. Lett. 81 469
|
[10] |
Chakraborty A, Kim K C, Wu F, Speck J S, DenBaars S P and Mishra U K 2006 Appl. Phys. Lett. 89 41903
|
[11] |
Seon M, Prokofyeva T and Holtz M 2000 Appl. Phys. Lett. 76 14
|
[12] |
Gibart P 2004 Rep. Prog. Phys. 67 667
|
[13] |
Okada N, Kawashima Y and Tadatomo K 2008 Appl. Phys. Express 1 111101
|
[14] |
Chiu C H, Yen H H, Chao C L, Li Z Y, Yu P C, Kuo H C, Lu T C, Wang C C, Lau K M and Cheng S J 2008 Appl. Phys. Lett. 93 081108
|
[15] |
Li Q M, Lin Y, Creighton J R, Figiel J J and Wang G T 2009 Adv. Mater. 21 2416
|
[16] |
Ku J T, Yang T H, Chang J R, Wong Y Y, Chou W C, Chang C Y and Chen C Y 2010 Jpn. J. Appl. Phys. 49 04DH06
|
[17] |
Gogneau N, Jalabert D and Monroy E 2003 J. Appl. Phys. 94 4
|
[18] |
Xu T, Zhou L, Wang Y Y, Özcan A S, Ludwig K F, Smith D J and Moustakas T D 2007 J. Appl. Phys. 102 073517
|
[19] |
Simon R J, Pelekanos N, Daudin B and Feuillet G 1999 Appl. Phys. Lett. 75 2639
|
[20] |
Zhong F, Li X H, Qiu K, Yin Z J, Ji C J, Cao X C, Han Q F, Chen J R and Wang Y Q 2007 Chin. Phys. 16 2786
|
[21] |
Peng C X, Weng H M, Zhu C F, Ye B J, Zhou X Y, Han R D, Fong W K and Surya C 2007 Physica B 391 6
|
[22] |
Goni A R, Siegle H, Syassen K, Thomsen C and Wagner J M 2001 Phys. Rev. B 64 035205
|
[23] |
Vispute R D and Talyansky V 1997 App. Phys. Lett. 70 2735
|
[24] |
Wright A F 1997 J. Appl. Phys. 82 2833
|
[25] |
Ide T, Shimizu M, Shen X Q, Jeganathan K, Okumura H and Nemoto T 2002 J. Cryst. Growth 245 15
|
[26] |
Zheng X H, Chen H, Yan Z B, Han Y J, Yu H B, Li D S, Huang Q and Zhou J M 2003 J. Cryst. Growth 255 63
|
[27] |
Perlin P, Jauberthie-Carillon C, Itie J P, Miguel A S, Grzegroy I and Polian A 1992 Phys. Rev. B 45 83
|
[28] |
Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y and Hao Y 2011 Chin. Phys. B 20 097701
|
[29] |
Shimizu M, Chonan H, Piao G X, Okumura H and Nakanishi H 2006 Mater. Sci. Forum. 527-529 1493
|
[30] |
Lu L W, Fong W K, Zhu C F, Leung B H, Surya C, Wang J and Ge W 2002 J. Cryst. Growth 234 99
|
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