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First principles simulation technique for characterizing single event effects |
Zhang Ke-Ying (张科营)a, Guo Hong-Xia (郭红霞)a, Luo Yin-Hong (罗尹虹)a, Fan Ru-Yu (范如玉)a, Chen Wei (陈伟)a, Lin Dong-Sheng (林东生)a, Guo Gang (郭刚)b, Yan Yi-Hua (闫逸华)c |
a Northwest Institute of Nuclear Techniques, Xi'an 710024, China; b China Institute of Atomic Energy, Beijing 102413, China; c Department of Engineering Physics, Tsinghua University, Beijing 100084, China |
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Abstract This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.
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Received: 17 June 2010
Revised: 14 March 2011
Accepted manuscript online:
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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61.81.Fk
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Cite this article:
Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华) First principles simulation technique for characterizing single event effects 2011 Chin. Phys. B 20 068501
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