Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

doi:10.1088/1674-1056/20/1/017804

Abstract We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

Keywords: metal-organic chemical deposition III-nitrides nonpolar light emitting diodes

Received: 03 January 2010
Revised: 03 February 2010
Accepted manuscript online:

PACS:	78.70.Ch
	78.55.Cr	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)
	78.67.De	(Quantum wells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60776041, 60976009 and U0834001), and the National Basic Research program of China (Grant No. 2007CB307004).

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Fang Hao(方浩),Long Hao(龙浩),Sang Li-Wen(桑立雯), Qi Sheng-Li(齐胜利),Xiong Chang(熊畅),Yu Tong-Jun(于彤军), Yang Zhi-Jian(杨志坚),and Zhang Guo-Yi(张国义) Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition 2011 Chin. Phys. B 20 017804

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Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

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