Optical characteristic and gap states distribution of amorphous SnO2:(Zn,In) film

doi:10.1088/1674-1056/19/12/127802

Abstract In this paper the fabrication technique of amorphous SnO₂:(Zn,In) film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.

Keywords: transmittance amorphous film gap states distribution

Received: 04 February 2010
Revised: 13 July 2010
Accepted manuscript online:

PACS:	61.43.Dq	(Amorphous semiconductors, metals, and alloys)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.66.Li	(Other semiconductors)
	81.15.Ef

Fund: Project supported by the Program A for Science and Technology of Education Bureau of Fujian Province of China (Grant No. JA08210).

Cite this article:

Zhang Zhi-Guo(张治国) Optical characteristic and gap states distribution of amorphous SnO₂:(Zn,In) film 2010 Chin. Phys. B 19 127802

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Optical characteristic and gap states distribution of amorphous SnO2:(Zn,In) film

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Optical characteristic and gap states distribution of amorphous SnO₂:(Zn,In) film