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Chin. Phys. B, 2010, Vol. 19(12): 124214    DOI: 10.1088/1674-1056/19/12/124214
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

A novel highly efficient grating coupler with large filling factor used for optoelectronic integration

Zhou Liang(周亮)a), Li Zhi-Yong(李智勇) a), and Zhu Yu(朱宇)a), Li Yun-Tao(李运涛)a), Fan Zhong-Cao(樊中朝)b), Han Wei-Hua(韩伟华)b), Yu Yu-De(俞育德)a), and Yu Jin-Zhong(余金中)a)†
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  A novel highly efficient grating coupler with large filling factor and deep etching is proposed in silicon-on-insulator for near vertical coupling between the rib waveguide and optical fibre. The deep slots acting as high efficient scattering centres are analysed and optimized. As high as 60% coupling efficiency at telecom wavelength of 1550-nm and 3-dB bandwidth of 61 nm are predicted by simulation. A peak coupling efficiency of 42.1% at wavelength 1546-nm and 3-dB bandwidth of 37.6 nm are obtained experimentally.
Keywords:  silicon photonics      silicon-on-insulator      grating coupler  
Received:  09 May 2010      Revised:  02 June 2010      Accepted manuscript online: 
PACS:  42.79.Dj (Gratings)  
  42.82.Bq (Design and performance testing of integrated-optical systems)  
  42.82.Et (Waveguides, couplers, and arrays)  
Fund: Project supported in part by the National Natural Science Foundation of China (Grant No. 60877036), the National Basic Research Program of China (Grant No. 2006CB302803), the Foundation of the State Key Laboratory of Advanced Optical Communication Systems and Networks, China (Grant No. 2008SH02) and the Knowledge Innovation Program of Institute of Semiconductors, Chinese Academy of Sciences (Grant No. ISCAS2008T10).

Cite this article: 

Zhou Liang(周亮), Li Zhi-Yong(李智勇), and Zhu Yu(朱宇), Li Yun-Tao(李运涛), Fan Zhong-Cao(樊中朝), Han Wei-Hua(韩伟华), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) A novel highly efficient grating coupler with large filling factor used for optoelectronic integration 2010 Chin. Phys. B 19 124214

[1] Bogaerts W, Baets R, Dumon P, Wiaux V, Beckx S, Taillaert D, Luyssaert B, Van Campenhout J, Bienstman P and Thourhout D V 2005 J. Lightwave Technol. 23 401
[2] Zhu Y, Xu X J, Li Z Y, Zhou L, Han W H, Fan Z C, Yu Y D and Yu J Z 2010 Chin. Phys. B 19 014219
[3] Taillaert D, Laere F V, Ayre M, Bogaerts W, Thourhout D V, Bienstman P and Baets R 2006 Jpn. J. Appl. Phys. 45 6071
[4] Van Laere F, Roelkens G, Ayre M, Schrauwen J, Taillaert D, Thourhout D V, Krauss T F and Baets R 2007 J. Lightwave Technol. 25 151
[5] Roelkens G, Vermeulen D, Thourhout D V, Baets R, Brision S, Lyan P, Gautier P and Fédéli J M 2008 Appl. Phys. Lett. 92 131101
[6] Schmid B, Petrov A and Eich M 2009 Opt. Express 17 11066
[7] Liu Liu, Pu Minhao, Yvind K and Hvam J M 2010 Appl. Phys. Lett. 96 051126
[8] Bolten J, Hofrichter J, Moll N, Schoenberger S, Horst F, Offrein B J, Wahlbrink T, Mollenhauer T and Kurz H 2009 Microelectronic Engineering 86 1114
[9] Green W M J, Rooks M J, Sekaric L and Vlasov Y A 2009 Opt. Express 15 17106
[10] Manipatruni S, Xu Q F, Schmidt B, Shakya J and Lipson M 2007 IEEE LEOS Ann. Meeting Conference Proc.
[11] Xu X J, Chen S W, Xu H H, Sun Y, Yu Y D, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 3900
[12] Bienstman P, CAMFR [online] available at http://camfr.sourceforge.net
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