Characteristics of pentacene organic thin film transistor with top gate and bottom contact
Yuan Guang-Cai(袁广才), Xu Zheng(徐征)†, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Jiang Wei-Wei(姜薇薇), Song Dan-Dan(宋丹丹), Zhu Hai-Na(朱海娜), Li Shao-Yan(李少彦), Huang Jin-Ying(黄金英), Huang Hao(黄豪), and Xu Xu-Rong(徐叙瑢)
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
Abstract High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO2 deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage VTH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility ($\mu$EF) of OTFT device increased with the increase of VDS, but the $\mu$EF of OTFT device increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current ratio was 0.48× 105 and subthreshold slope was 0.44V/dec. The $\mu$EF was 1.10cm2/(V$\cdot$s), threshold voltage was --2.71V for the OTFT device.
Received: 21 September 2007
Revised: 12 October 2007
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60576016), the
National High Technology Research and Development Program of China
(Grant No 2006AA03Z0412), the Beijing Natural Science Foundation of
China (Grant No 2073030),
Cite this article:
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Jiang Wei-Wei(姜薇薇), Song Dan-Dan(宋丹丹), Zhu Hai-Na(朱海娜), Li Shao-Yan(李少彦), Huang Jin-Ying(黄金英), Huang Hao(黄豪), and Xu Xu-Rong(徐叙瑢) Characteristics of pentacene organic thin film transistor with top gate and bottom contact 2008 Chin. Phys. B 17 1887
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