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Chin. Phys. B, 2008, Vol. 17(4): 1360-1363    DOI: 10.1088/1674-1056/17/4/034
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

Li Xin-Hua(李新化), Zhong Fei(钟飞), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), and Ji Chang-Jian(姬长建)
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Abstract  This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double AlN buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858 cm$^{2}$/V$\cdot $s at room temperature when the thickness of LT-AlN layer varies from 0 to 20 nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer.
Keywords:  Gallium Nitride      buffer layer      carrier mobility      polarity  
Received:  07 February 2007      Revised:  30 August 2007      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  73.50.Dn (Low-field transport and mobility; piezoresistance)  
  73.61.Ey (III-V semiconductors)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10574130).

Cite this article: 

Li Xin-Hua(李新化), Zhong Fei(钟飞), Qiu Kai(邱凯), Yin Zhi-Jun(尹志军), and Ji Chang-Jian(姬长建) Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy 2008 Chin. Phys. B 17 1360

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