Abstract Electromechanical property of a p-type single-crystal silicon nanoplate is modelled by a microscopic approach where the hole quantization effect and the spin--orbit coupling effect are taken into account. The visible anisotropic subband structures are calculated by solving self-consistently the stress-dependent 6$\times $6 ${\bm k} \cdot {\bm p} $ Schr\"{o}dinger equation with the Poisson equation. The strong mixing among heavy, light, and split-off holes is quantitatively assessed. The influences of the thickness and the temperature on the piezoresistive coefficient are quantitatively investigated by using the hole concentrations and the effective masses from the complex dispersion structure of the valence band with and without stresses. Our results show that the stress determines the extent to which the band is mixed. The hole quantization effect increases as the thickness decreases, and therefore the valence band is strongly reshaped, resulting in the size-dependent piezoresistivity of the silicon nanoplate. The piezoresistive coefficient increases almost 4 times as the thickness reduces from the bulk to 3\,nm, exhibiting a promising application in mechanical sensors.
Received: 28 April 2008
Revised: 29 May 2008
Accepted manuscript online:
PACS:
72.20.Fr
(Low-field transport and mobility; piezoresistance)
Fund: Project supported by
the National Basic Research Program of China (Grant No
2006CB300404), and the National High-Technology Research and
Development Program of China
(Grant No 2007AA04Z301).
Cite this article:
Zhang Jia-Hong (张加宏), Huang Qing-An (黄庆安), Yu Hong (于 虹), Lei Shuang-Ying (雷双瑛) Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors 2008 Chin. Phys. B 17 4292
Surface-induced orbital-selective band reconstruction in kagome superconductor CsV3Sb5 Linwei Huai(淮琳崴), Yang Luo(罗洋), Samuel M. L. Teicher, Brenden R. Ortiz, Kaize Wang(王铠泽),Shuting Peng(彭舒婷), Zhiyuan Wei(魏志远), Jianchang Shen(沈建昌), Bingqian Wang(王冰倩), Yu Miao(缪宇),Xiupeng Sun(孙秀鹏), Zhipeng Ou(欧志鹏), Stephen D. Wilson, and Junfeng He(何俊峰). Chin. Phys. B, 2022, 31(5): 057403.
Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate S Lu(卢帅), K Peng(彭坤), P D Wang(王鹏栋), A X Chen(陈爱喜), W Ren(任伟), X W Fang(方鑫伟), Y Wu(伍莹), Z Y Li(李治云), H F Li(李慧芳), F Y Cheng(程飞宇), K L Xiong(熊康林), J Y Yang(杨继勇), J Z Wang(王俊忠), S A Ding(丁孙安), Y P Jiang(蒋烨平), L Wang(王利), Q Li(李青), F S Li(李坊森), and L F Chi(迟力峰). Chin. Phys. B, 2021, 30(12): 126804.
Epitaxial fabrication of monolayer copper arsenide on Cu(111) Shuai Zhang(张帅), Yang Song(宋洋), Jin Mei Li(李金梅), Zhenyu Wang(王振宇), Chen Liu(刘晨), Jia-Ou Wang(王嘉鸥), Lei Gao(高蕾), Jian-Chen Lu(卢建臣), Yu Yang Zhang(张余洋), Xiao Lin(林晓), Jinbo Pan(潘金波), Shi Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2020, 29(7): 077301.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.