Abstract The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.
Received: 07 September 1999
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 69736010).
Cite this article:
Li Yue-fa (李月法), Liu Feng-qi (刘峰奇), Xu Bo (徐波), Lin Feng (林峰), Wu Jü (吴巨), Jiang Wei-hong (姜卫红), Ding Ding (丁鼎), Wang Zhan-guo (王占国) InAs SELF-ASSEMBLED NANOSTRUCTURES GROWN ON InP(001) 2000 Chinese Physics 9 222
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Non-volatile multi-state magnetic domain transformation in a Hall balance Yang Gao(高阳), Jingyan Zhang(张静言), Pengwei Dou(窦鹏伟), Zhuolin Li(李卓霖), Zhaozhao Zhu(朱照照), Yaqin Guo(郭雅琴), Chaoqun Hu(胡超群), Weidu Qin(覃维都), Congli He(何聪丽), Shipeng Shen(申世鹏), Ying Zhang(张颖), and Shouguo Wang(王守国). Chin. Phys. B, 2022, 31(6): 067502.
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