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Chinese Physics, 2000, Vol. 9(10): 783-786    DOI: 10.1088/1009-1963/9/10/013
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS

Liang Jian-jun (梁建军)abc, Chen Wei-de (陈维德)abc, Wang Yong-qian (王永谦)abc, Chang Yong (常勇)c, Wang Zhan-guo (王占国)a
a Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;  b Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China c State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract  Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.
Keywords:  erbium      photoluminescence      a-SiO:H      boron and phosphorus co-doping  
Received:  02 February 2000      Revised:  25 April 2000      Accepted manuscript online: 
PACS:  61.72.Cc (Kinetics of defect formation and annealing)  
  61.72.Mm (Grain and twin boundaries)  
  78.55.Qr (Amorphous materials; glasses and other disordered solids)  
  81.40.Gh (Other heat and thermomechanical treatments)  
Fund: Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).

Cite this article: 

Liang Jian-jun (梁建军), Chen Wei-de (陈维德), Wang Yong-qian (王永谦), Chang Yong (常勇), Wang Zhan-guo (王占国) 1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS 2000 Chinese Physics 9 783

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