The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide
Guo Hui(郭辉)a) † , Zhang Yi-Men(张义门)a), Qiao Da-Yong(乔大勇)b), Sun Lei(孙磊)b), and Zhang Yu-Ming(张玉明)a)
a Microelectronic School, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; b Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 710072, China
Abstract This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi$_{2}$/SiC structure are formed on N-wells created by N$^{ + }$ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi$_{2}$ films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance $\rho _{c}$ of NiSi contact to n-type 6H-SiC as low as 1.78$\times $10$^{ - 6}\Omega $cm$^{2}$ is achieved after a two-step annealing at 350~${^\circ}$C for 20 min and 950${^\circ}$C for 3 min in N$_{2}$. And 3.84$\times $10$^{ - 6}\Omega $cm$^{2}$ for NiSi$_{2}$ contact is achieved. The result for sheet resistance $R_{\rm sh}$ of the N$^{ + }$ implanted layers is about 1210$\Omega /\square$. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.
Received: 19 September 2006
Revised: 30 October 2006
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by the National Basic Research Program of China (Grant
No~2002CB311904), the
National Defense Basic Research Program of China (Grant No~51327010101) and
the National Natural Science Foundation of China (Grant No~60376001).
Cite this article:
Guo Hui(郭辉), Zhang Yi-Men(张义门), Qiao Da-Yong(乔大勇), Sun Lei(孙磊), and Zhang Yu-Ming(张玉明) The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide 2007 Chinese Physics 16 1753
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