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Chinese Physics, 2006, Vol. 15(12): 3019-3025    DOI: 10.1088/1009-1963/15/12/041
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

Song Hong-Zhou(宋红州), Zhang Ping(张平), Duan Su-Qing(段素青), and Zhao Xian-Geng(赵宪庚)
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
Abstract  We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.
Keywords:  Hall effect      spin--orbit coupling      spintronics      spin transport  
Received:  28 February 2006      Revised:  19 July 2006      Accepted manuscript online: 
PACS:  73.63.Hs (Quantum wells)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  72.10.Bg (General formulation of transport theory)  
  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  72.25.Dc (Spin polarized transport in semiconductors)  
  72.80.Ey (III-V and II-VI semiconductors)  

Cite this article: 

Song Hong-Zhou(宋红州), Zhang Ping(张平), Duan Su-Qing(段素青), and Zhao Xian-Geng(赵宪庚) Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells 2006 Chinese Physics 15 3019

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