Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films
Lei Qing-Song (雷青松)a, Wu Zhi-Meng (吴志猛)a, Geng Xin-Hua (耿新华)b, Zhao Ying (赵颖)b, Sun Jian (孙健)b, Xi Jian-Ping (奚建平)a
a Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Photo-Electronics, Nankai University, Tianjin 300071, China
Abstract Highly conductive boron-doped hydrogenated microcrystalline silicon ($\mu$ c-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$ ranging from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction ($X_{\rm c})$ and the grain size increase initially, then reach their maximum values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have a similar dependence on $T_{\rm S}$ and arrive at their maximum values at $T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower substrate temperature $T_{\rm S}$, a higher dopant concentration is required in order to obtain a maximum $\sigma _{\rm d}$.
Received: 16 May 2005
Revised: 22 September 2005
Accepted manuscript online:
(Galvanomagnetic and other magnetotransport effects)
Fund: Project supported by the State Key Program of Basic Research of China (Grant Nos G2000028202 and G2000028203).
Cite this article:
Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙健), Xi Jian-Ping (奚建平) Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films 2006 Chinese Physics 15 213
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