Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)

doi:10.1088/1674-1056/26/12/127306

Abstract Germanium-tin films with rather high Sn content (28.04% and 29.61%) are deposited directly on Si (100) and Si (111) substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_1-xSn_x films is investigated by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The x-ray diffraction (XRD) is also performed to determine the crystallinities of the Ge_1-xSn_x films. The experimental results indicate that root mean square (RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional (3D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_1-xSn_x/Si (111) has no obvious advantage over that of Ge_1-xSn_x/Si (100) and the selection of Si (111) substrate is an effective method to improve the surface morphologies of Ge_1-xSn_x films. We also find that more severe Sn surface segregation occurs in the Ge_1-xSn_x/Si (111) sample during annealing than in the Ge_1-xSn_x/Si (100) sample.

Keywords: Ge_1-xSn_x films crystallinity Sn surface segregation Sn surface composition

Received: 20 April 2017
Revised: 05 September 2017
Accepted manuscript online:

PACS:

73.61.At

(Metal and metallic alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Corresponding Authors: Yuan-Hao Miao, Yuan-Hao Miao
E-mail: 15336118340@163.com;huhy@xidian.edu.cn

Cite this article:

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣) Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111) 2017 Chin. Phys. B 26 127306

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Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)

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Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)