Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

doi:10.1088/1009-1963/14/10/038

Abstract

Abstract The composite films of the nanocrystalline GaAs_1-xSb_x--SiO₂ have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs_1-xSb_x indicated that the PL peaks of the GaAs_1-xSb_x nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs_1-xSb_x--SiO₂ composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.

Keywords: nanocrystalline GaAs_1-xSb_x photoluminescence transmission absorption quantum confinement effect

Received: 01 March 2005
Revised: 24 May 2005
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	78.67.Bf	(Nanocrystals, nanoparticles, and nanoclusters)
	81.15.Cd	(Deposition by sputtering)
	78.66.Fd	(III-V semiconductors)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

Fund: Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

Cite this article:

Liu Fa-Min (刘发民), Zhang Li-De (张立德), Li Guo-Hua (李国华) Photoluminescence and transmission spectra of nanocrystalline GaAs_1-xSb_x embedded in silica films 2005 Chinese Physics 14 2145

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Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

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Photoluminescence and transmission spectra of nanocrystalline GaAs_1-xSb_x embedded in silica films