Please wait a minute...
Chinese Physics, 2003, Vol. 12(8): 895-898    DOI: 10.1088/1009-1963/12/8/314
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Numerical modelling of anisotropy in 4H-SiC MESFET's

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.
Keywords:  4H-SiC      MESFET      anisotropy      numerical model  
Received:  23 October 2002      Revised:  20 March 2003      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  

Cite this article: 

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Numerical modelling of anisotropy in 4H-SiC MESFET's 2003 Chinese Physics 12 895

[1] Recent progress on the planar Hall effect in quantum materials
Jingyuan Zhong(钟景元), Jincheng Zhuang(庄金呈), and Yi Du(杜轶). Chin. Phys. B, 2023, 32(4): 047203.
[2] Vortex bound states influenced by the Fermi surface anisotropy
Delong Fang(方德龙). Chin. Phys. B, 2023, 32(3): 037403.
[3] Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes
Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Chin. Phys. B, 2023, 32(3): 038502.
[4] High repetition granular Co/Pt multilayers with improved perpendicular remanent magnetization for high-density magnetic recording
Zhi Li(李智), Kun Zhang(张昆), Ao Du(杜奥), Hongchao Zhang(张洪超), Weibin Chen(陈伟斌), Ning Xu(徐宁), Runrun Hao(郝润润), Shishen Yan(颜世申), Weisheng Zhao(赵巍胜), and Qunwen Leng(冷群文). Chin. Phys. B, 2023, 32(2): 026803.
[5] Bismuth doping enhanced tunability of strain-controlled magnetic anisotropy in epitaxial Y3Fe5O12(111) films
Yunpeng Jia(贾云鹏), Zhengguo Liang(梁正国), Haolin Pan(潘昊霖), Qing Wang(王庆), Qiming Lv(吕崎鸣), Yifei Yan(严轶非), Feng Jin(金锋), Dazhi Hou(侯达之), Lingfei Wang(王凌飞), and Wenbin Wu(吴文彬). Chin. Phys. B, 2023, 32(2): 027501.
[6] Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy
Chunjie Yan(晏春杰), Lina Chen(陈丽娜), Kaiyuan Zhou(周恺元), Liupeng Yang(杨留鹏), Qingwei Fu(付清为), Wenqiang Wang(王文强), Wen-Cheng Yue(岳文诚), Like Liang(梁力克), Zui Tao(陶醉), Jun Du(杜军),Yong-Lei Wang(王永磊), and Ronghua Liu(刘荣华). Chin. Phys. B, 2023, 32(1): 017503.
[7] In-plane optical anisotropy of two-dimensional VOCl single crystal with weak interlayer interaction
Ruijie Wang(王瑞洁), Qilong Cui(崔其龙), Wen Zhu(朱文), Yijie Niu(牛艺杰), Zhanfeng Liu(刘站锋), Lei Zhang(张雷), Xiaojun Wu(武晓君), Shuangming Chen(陈双明), and Li Song(宋礼). Chin. Phys. B, 2022, 31(9): 096802.
[8] Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals
Jia-Ming Zhao(赵佳铭) and Zhi-He Wang(王智河). Chin. Phys. B, 2022, 31(9): 097402.
[9] Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)
Qingrong Shao(邵倾蓉), Jing Meng(孟婧), Xiaoyan Zhu(朱晓艳), Yali Xie(谢亚丽), Wenjuan Cheng(程文娟), Dongmei Jiang(蒋冬梅), Yang Xu(徐杨), Tian Shang(商恬), and Qingfeng Zhan(詹清峰). Chin. Phys. B, 2022, 31(8): 087503.
[10] Voltage control magnetism and ferromagnetic resonance in an Fe19Ni81/PMN-PT heterostructure by strain
Jun Ren(任军), Junming Li(李军明), Sheng Zhang(张胜), Jun Li(李骏), Wenxia Su(苏文霞), Dunhui Wang(王敦辉), Qingqi Cao(曹庆琪), and Youwei Du(都有为). Chin. Phys. B, 2022, 31(7): 077502.
[11] A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[12] Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Chin. Phys. B, 2022, 31(4): 046104.
[13] The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy
Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
[14] A new direct band gap silicon allotrope o-Si32
Xin-Chao Yang(杨鑫超), Qun Wei(魏群), Mei-Guang Zhang(张美光), Ming-Wei Hu(胡明玮), Lin-Qian Li(李林茜), and Xuan-Min Zhu(朱轩民). Chin. Phys. B, 2022, 31(2): 026104.
[15] Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers
Lin-Ao Huang(黄林傲), Mei-Yu Wang(王梅雨), Peng Wang(王鹏), Yuan Yuan(袁源), Ruo-Bai Liu(刘若柏), Tian-Yu Liu(刘天宇), Yu Lu(卢羽), Jia-Rui Chen(陈家瑞), Lu-Jun Wei(魏陆军), Wei Zhang(张维), Biao You(游彪), Qing-Yu Xu(徐庆宇), and Jun Du(杜军). Chin. Phys. B, 2022, 31(2): 027506.
No Suggested Reading articles found!