Tight-binding calculation of the electronic states of bulk-terminated GaAs(311)A and B surfaces
Jia Yu (贾瑜)c, Ma Bing-Xian (马丙现)b, Yao Qian-Kai (姚乾凯)a, Tang Ming-Sheng (唐明生)b
a State Key Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China; b Fundamental and Applied Science Research Institute of Henan, Zhengzhou 450052, China
Abstract We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along $\varGamma-Y-S-X-\varGamma$ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.
Received: 23 April 2001
Revised: 05 September 2001
Accepted manuscript online:
PACS:
71.15.Ap
(Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))
Fund: Project supported by the Natural Science Foundation of the Education Commission of Henan Province (Grant No. 1999140003), and the Natural Science Foundation of Henan Province, China (Grant No. 99042300).
Cite this article:
Jia Yu (贾瑜), Ma Bing-Xian (马丙现), Yao Qian-Kai (姚乾凯), Tang Ming-Sheng (唐明生) Tight-binding calculation of the electronic states of bulk-terminated GaAs(311)A and B surfaces 2002 Chinese Physics 11 58
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
