Please wait a minute...
Chinese Physics, 2001, Vol. 10(10): 966-969    DOI: 10.1088/1009-1963/10/10/315
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

Gao Fei (高斐)ac, Huang Chang-jun (黄昌俊)b, Huang Da-ding (黄大定)c, Li Jian-ping (李建平)c, Kong Mei-ying (孔梅影)c, Zeng Yi-ping (曾一平)c, Li Jin-min (李晋闽)c, Lin Lan-ying (林兰英)c
a Department of Physics, Shaanxi Normal University, Xi'an 710062, China; b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.
Keywords:  Ge islands      chemical etching      photoluminescence      Si2H6-Ge molecular beam epitaxy  
Received:  15 March 2001      Revised:  31 May 2001      Accepted manuscript online: 
PACS:  78.55.Ap (Elemental semiconductors)  
  81.65.Cf (Surface cleaning, etching, patterning)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  68.55.-a (Thin film structure and morphology)  
  78.66.Db (Elemental semiconductors and insulators)  
Fund: Project supported by the Key Program in the National "Ninth Five-Year" Plan, China (Grant No. 97-763-02-02).

Cite this article: 

Gao Fei (高斐), Huang Chang-jun (黄昌俊), Huang Da-ding (黄大定), Li Jian-ping (李建平), Kong Mei-ying (孔梅影), Zeng Yi-ping (曾一平), Li Jin-min (李晋闽), Lin Lan-ying (林兰英) INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING 2001 Chinese Physics 10 966

[1] Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors
Yu-De Niu(牛毓德), Yu-Zhen Wang(汪玉珍), Kai-Ming Zhu(朱凯明), Wang-Gui Ye(叶王贵), Zhe Feng(冯喆), Hui Liu(柳挥), Xin Yi(易鑫), Yi-Huan Wang(王怡欢), and Xuan-Yi Yuan(袁轩一). Chin. Phys. B, 2023, 32(2): 028703.
[2] Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2
Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[3] Enhanced photoluminescence of monolayer MoS2 on stepped gold structure
Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Chin. Phys. B, 2022, 31(8): 087803.
[4] Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo2O4/xPbS nanocomposites for optoelectronic applications
Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Chin. Phys. B, 2022, 31(6): 067801.
[5] Exciton luminescence and many-body effect of monolayer WS2 at room temperature
Jian-Min Wu(吴建民), Li-Hui Li(黎立辉), Wei-Hao Zheng(郑玮豪), Bi-Yuan Zheng(郑弼元), Zhe-Yuan Xu(徐哲元), Xue-Hong Zhang(张学红), Chen-Guang Zhu(朱晨光), Kun Wu(吴琨), Chi Zhang(张弛), Ying Jiang(蒋英),Xiao-Li Zhu(朱小莉), and Xiu-Juan Zhuang(庄秀娟). Chin. Phys. B, 2022, 31(5): 057803.
[6] Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method
Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Chin. Phys. B, 2022, 31(5): 057801.
[7] Magnetic polaron-related optical properties in Ni(II)-doped CdS nanobelts: Implication for spin nanophotonic devices
Fu-Jian Ge(葛付建), Hui Peng(彭辉), Ye Tian(田野), Xiao-Yue Fan(范晓跃), Shuai Zhang(张帅), Xian-Xin Wu(吴宪欣), Xin-Feng Liu(刘新风), and Bing-Suo Zou(邹炳锁). Chin. Phys. B, 2022, 31(1): 017802.
[8] Pressure- and temperature-dependent luminescence from Tm3+ ions doped in GdYTaO4
Peng-Yu Zhou(周鹏宇), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权), Ren-Qin Dou(窦仁琴), Qing-Li Zhang(张庆礼), Bao Liu(刘鲍), Pu-Geng Hou(侯朴赓), Kai-Lin Chi(迟凯粼), and Kun Ding(丁琨). Chin. Phys. B, 2022, 31(1): 017101.
[9] Controllable preparation and disorder-dependent photoluminescence of morphologically different C60 microcrystals
Wen Cui(崔雯), De-Jun Li(李德军), Jin-Liang Guo(郭金良), Lang-Huan Zhao(赵琅嬛), Bing-Bing Liu(刘冰冰), and Shi-Shuai Sun(孙士帅). Chin. Phys. B, 2021, 30(8): 086101.
[10] Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE
Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰). Chin. Phys. B, 2021, 30(6): 067306.
[11] Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation
Yong Wang(王勇), Qing Liao(廖庆), Ming Liu(刘茗), Peng-Fei Zheng(郑鹏飞), Xinyu Gao(高新宇), Zheng Jia(贾政), Shuai Xu(徐帅), and Bing-Sheng Li(李炳生). Chin. Phys. B, 2021, 30(5): 056106.
[12] Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content
Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2021, 30(4): 047801.
[13] Microstructure, optical, and photoluminescence properties of β -Ga2O3 films prepared by pulsed laser deposition under different oxygen partial pressures
Rui-Rui Cui(崔瑞瑞), Jun Zhang(张俊), Zi-Jiang Luo(罗子江), Xiang Guo(郭祥), Zhao Ding(丁召), and Chao-Yong Deng(邓朝勇). Chin. Phys. B, 2021, 30(2): 028505.
[14] Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method
Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Ya-Juan Hao(郝亚娟), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), and Shu-Qing Yuan(袁书卿). Chin. Phys. B, 2021, 30(1): 016104.
[15] Energy transfer, luminescence properties, and thermal stability of color tunable barium pyrophosphate phosphors
Meng-Jiao Xu(徐梦姣), Su-Xia Li(李素霞), Chen-Chen Ji(季辰辰), Wan-Xia Luo(雒晚霞), Lu-Xiang Wang(王鲁香). Chin. Phys. B, 2020, 29(6): 063301.
No Suggested Reading articles found!