Abstract Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films.
Received: 27 April 1999
Accepted manuscript online:
Fund: Project supported by the State Key Laboratory of GaAs Integrated Circuits of China, the National Natural Science Foundation of China (Grant Nos. 19574008 and 19774001), the National "Climb" Program on the Science and Technology of Nanomaterials, China.
Cite this article:
ZHAO GUO-NIAN (赵国念), XIAN-YU HAI-QING (鲜于海清), SONG JIAN (宋健), REN SHANG-YUAN (李效白), LI XIAO-BAI (任尚元) SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTS 1999 Acta Physica Sinica (Overseas Edition) 8 845
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
