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Acta Physica Sinica (Overseas Edition), 1999, Vol. 8(11): 853-859    DOI: 10.1088/1004-423X/8/11/009
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

XU PENG-SHOU (徐彭寿)ab, GUO HONG-ZHI (郭红志)b, ZHANG FA-PEI (张发培)ab, LU ER-DONG (陆尔东)b, XU FA-QIANG (徐法强)b, PAN HAI-BIN (潘海斌)b, ZHANG XIN-YI (张新夷)b#br#
a Structure Research Laboratory, University of Science & Technology of China, Chinese Academy of Sciences, Hefei 230026, China; National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230029, China
Abstract  Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.
Received:  02 February 1999      Revised:  14 May 1999      Accepted manuscript online: 
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  81.65.Rv (Passivation)  
  76.50.+g (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)  
  61.72.Cc (Kinetics of defect formation and annealing)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  68.35.Fx (Diffusion; interface formation)  
Fund: Project supported by the Doctoral Program Foundation of Institution of Higher Education of China (Grant No. 98035811) and the National Natural Science Foundation of China (Grant No. 19574042).

Cite this article: 

XU PENG-SHOU (徐彭寿), GUO HONG-ZHI (郭红志), ZHANG FA-PEI (张发培), LU ER-DONG (陆尔东), XU FA-QIANG (徐法强), PAN HAI-BIN (潘海斌), ZHANG XIN-YI (张新夷) A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2 1999 Acta Physica Sinica (Overseas Edition) 8 853

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