Abstract In this paper the influence of $\gamma$-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with $\gamma$-radiation or not. For the $\gamma$-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before $\gamma$-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from $\gamma$-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.
Received: 12 August 1993
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
ZHANG DAO-FAN (张道范), ZHU YONG (朱镛), YANG HUA-GUANG (杨华光), MA WEN-YI (马文漪), GU BEN-YUAN (顾本源) INFLUENCE OF $\gamma$-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION 1994 Acta Physica Sinica (Overseas Edition) 3 176
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