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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench
王沛, 罗小蓉, 蒋永恒, 王琦, 周坤, 吴丽娟, 王骁玮, 蔡金勇, 罗尹春, 范叶, 胡夏融, 范远航, 魏杰, 张波
2013 (2):
27305-027305.
doi: 10.1088/1674-1056/22/2/027305
摘要
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An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces Ron,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the super-junction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV=172 V and Ron,sp=0.85 mΩ·cm2 is obtained by simulation; its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).
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