Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

doi:10.1088/1674-1056/22/2/027305

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27305-027305.doi: 10.1088/1674-1056/22/2/027305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

王沛, 罗小蓉, 蒋永恒, 王琦, 周坤, 吴丽娟, 王骁玮, 蔡金勇, 罗尹春, 范叶, 胡夏融, 范远航, 魏杰, 张波

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2012-04-19 修回日期:2012-07-08 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 ) and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062).

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2012-04-19 Revised:2012-07-08 Online:2013-01-01 Published:2013-01-01
Contact: Luo Xiao-Rong E-mail:xrluo@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 ) and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062).

摘要/Abstract

摘要： An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces R_on,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the super-junction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV=172 V and R_on,sp=0.85 mΩ·cm² is obtained by simulation; its R_on,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).

关键词: high permittivity, specific on-resistance, breakdown voltage, trench gate

Abstract: An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces R_on,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the super-junction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV=172 V and R_on,sp=0.85 mΩ·cm² is obtained by simulation; its R_on,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).

Key words: high permittivity, specific on-resistance, breakdown voltage, trench gate

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures) 73.61.Ng (Insulators)

王沛, 罗小蓉, 蒋永恒, 王琦, 周坤, 吴丽娟, 王骁玮, 蔡金勇, 罗尹春, 范叶, 胡夏融, 范远航, 魏杰, 张波. Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench[J]. 中国物理B, 2013, 22(2): 27305-027305.

Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波). Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench[J]. Chin. Phys. B, 2013, 22(2): 27305-027305.

参考文献 22

[1]	Chen J, Sun W F, Zhang L, Zhu J and Lin Y Z 2012 IETE Tech. Rev. 29 44
[2]	Ren M, Li Z H, Deng G M, Zhang L X, Zhang M, Liu X L, Xie J X and Zhang B 2012 Chin. Phys. B 21 048502
[3]	Baliga B J 1996 Power Semiconductor Devices (Boston, MA: PWS) 373
[4]	Coe D J US 1988 US Patent: 4754310 [1988-06-28]
[5]	Chen X B and Sin J K O 2001 IEEE Trans. Electron. Dev. 48 344
[6]	Gan K P, Liang Y C, Samudra G S, Xu S M and Liu Y 2001 IEEE 32nd Annual Power Electronics Specialists Conference. June 17-21, 2001, Vancouver, BC 4 2156
[7]	Liang Y C, Gan K P and Samudra G S 2001 IEEE Electron. Dev. Lett. 22 407
[8]	Duan B X, Yang Y T, Zhang B and Li Z J 2011 Micro & Nano Lett. 6 777
[9]	Wang Y, Lan H, Cao F, Liu Y T and Shao L 2012 Chin. Phys. B 21 068503
[10]	Onishi Y, Iwamoto S, Sato T, Nagaoka T, Ueno K and Fujihira T 2002 ISPSD. pp. 241-244
[11]	Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X and Wei J 2012 Chin. Phys. B 21 068501
[12]	Chen X B 2005 US Patent 6,936,907 B2 [2005-08-30]
[13]	Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B and Udrea F 2011 IEEE Electron. Dev. 32 185
[14]	Chen X B 2007 US Patent 7,230, 310 B2 [2007-06-12]
[15]	Wang C L and Sun J 2009 Chin. Phys. B 18 1231
[16]	Huang L, Huang A P and Zheng X H 2012 Acta Phys. Sin. 61 137303 (in Chinese)
[17]	Robert W M and Glen W D 2003 Critical Reviews in Solid State and Material Sciences 28 231
[18]	Robertson J 2006 Rep. Prog. Phys. 69 327
[19]	Arne W B, Douglas A B, Eduard A C, Matthew W C, Christopher P D E, Evgeni P G, Fenton R M, Joseph S N, Harald F O S, Patrick R V and Theodore H Z 2006 US Patent 6,444,592 B1 [2006-09-03]
[20]	Wang Z, Kugler V, Helmersson U, Evangelou E K, Konofaos N, Nakao S and Jin P 2001 Appl. Phys. Lett. 79 1513
[21]	Sze S M and Ng K K 2007 Physics of Semiconductor Devices (New Jersey: John Wiley & Sons, Inc.) pp. 203-205
[22]	Ye H and Haldar P 2008 IEEE Trans. Electron Dev. 55 2246

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

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