中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27202-027202.doi: 10.1088/1674-1056/22/2/027202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The design and manufacture of a notch structure for a planar InP Gunn diode

白阳, 贾锐, 武德起, 金智, 刘新宇   

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2012-06-15 修回日期:2012-07-27 出版日期:2013-01-01 发布日期:2013-01-01
  • 基金资助:
    Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

The design and manufacture of a notch structure for a planar InP Gunn diode

Bai Yang (白阳), Jia Rui (贾锐), Wu De-Qi (武德起), Jin Zhi (金智), Liu Xin-Yu (刘新宇 )   

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2012-06-15 Revised:2012-07-27 Online:2013-01-01 Published:2013-01-01
  • Contact: Jia Rui E-mail:jiarui@ime.ac.cn
  • Supported by:
    Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

PDF (PC)

1006

赞

摘要： A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for being integrated into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but it has a variable spacing between anode and cathode; the other has a fixed spacing, but it has a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA. In this work, the diameter of the diode and the space between anode and athode are optimized. The devices are fabricated using wet etching technique and show excellent performances. The results strongly suggest that the low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

关键词: InP Gunn device, millimeter generation, planar Gunn diode

Abstract: A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for being integrated into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but it has a variable spacing between anode and cathode; the other has a fixed spacing, but it has a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA. In this work, the diameter of the diode and the space between anode and athode are optimized. The devices are fabricated using wet etching technique and show excellent performances. The results strongly suggest that the low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

Key words: InP Gunn device, millimeter generation, planar Gunn diode

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.61.Ey (III-V semiconductors)